Dual Ion Effect of the Lithium Silicate Resistance Random Access Memory

In this letter, dual ion effect induced reset process of lithium silicate resistance random access memory (RRAM) devices is studied and discussed. Unlike the traditional silicon oxide-based RRAM, lithium ions also participate in the resistive switching process except for the oxygen ions. Owing to th...

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Veröffentlicht in:	IEEE electron device letters 2014-05, Vol.35 (5), p.530-532
Hauptverfasser:	Kuan-Chang Chang, Tsung-Ming Tsai, Ting-Chang Chang, Kai-Huang Chen, Rui Zhang, Zhi-Yang Wang, Jung-Hui Chen, Tai-Fa Young, Min-Chen Chen, Tian-Jian Chu, Syuan-Yong Huang, Yong-En Syu, Ding-Hua Bao, Sze, Simon M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Design. Technologies. Operation analysis. Testing dual ion effect Electrodes Electronics Exact sciences and technology I-V Integrated circuits Integrated circuits by function (including memories and processors) Ions Lithium lithium silicate Resistance RRAM Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Switches Tin
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