Multi-Drive Stacked-FET Power Amplifiers at 90 GHz in 45 nm SOI CMOS

Gate resistance significantly limits the output power and power-added efficiency of stacked-FET power amplifiers in 45 nm SOI CMOS above 60 GHz. A multi-drive stacked-FET approach is proposed to improve the output power and efficiency. An analysis of conventional and multi-drive stacked-FET PAs demo...

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Veröffentlicht in:IEEE journal of solid-state circuits 2014-05, Vol.49 (5), p.1148-1157
Hauptverfasser: Agah, Amir, Jayamon, Jefy Alex, Asbeck, Peter M., Larson, Lawrence E., Buckwalter, James F.
Format: Artikel
Sprache:eng
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Zusammenfassung:Gate resistance significantly limits the output power and power-added efficiency of stacked-FET power amplifiers in 45 nm SOI CMOS above 60 GHz. A multi-drive stacked-FET approach is proposed to improve the output power and efficiency. An analysis of conventional and multi-drive stacked-FET PAs demonstrates the performance improvement. A multi-drive three-stack PA is implemented in 45 nm SOI CMOS for 90 GHz operation occupying 0.23 mm 2 . This PA achieves more than 19 dBm output power with peak PAE of 14% and 12 dB gain at 90 GHz using a 3.4 V power supply.
ISSN:0018-9200
1558-173X
DOI:10.1109/JSSC.2014.2308292