Multi-Drive Stacked-FET Power Amplifiers at 90 GHz in 45 nm SOI CMOS
Gate resistance significantly limits the output power and power-added efficiency of stacked-FET power amplifiers in 45 nm SOI CMOS above 60 GHz. A multi-drive stacked-FET approach is proposed to improve the output power and efficiency. An analysis of conventional and multi-drive stacked-FET PAs demo...
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Veröffentlicht in: | IEEE journal of solid-state circuits 2014-05, Vol.49 (5), p.1148-1157 |
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Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Gate resistance significantly limits the output power and power-added efficiency of stacked-FET power amplifiers in 45 nm SOI CMOS above 60 GHz. A multi-drive stacked-FET approach is proposed to improve the output power and efficiency. An analysis of conventional and multi-drive stacked-FET PAs demonstrates the performance improvement. A multi-drive three-stack PA is implemented in 45 nm SOI CMOS for 90 GHz operation occupying 0.23 mm 2 . This PA achieves more than 19 dBm output power with peak PAE of 14% and 12 dB gain at 90 GHz using a 3.4 V power supply. |
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ISSN: | 0018-9200 1558-173X |
DOI: | 10.1109/JSSC.2014.2308292 |