Fabrication, electrical characterization and reliability study of partially electroplated tapered copper through-silicon vias

The fabrication, electrical characterization and reliability study of copper through-silicon via (TSV) is reported. All the fabrication steps needed in this process have a process temperature

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Bibliographische Detailangaben
Hauptverfasser:	Dixit, Pradeep, Viljanen, Heikki, Salonen, Jaakko, Suni, Tommi, Molarius, Jyrki, Monnoyer, Philippe
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Copper Electrical resistance measurement Kelvin Reliability Resistance Through-silicon vias
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Beschreibung
Zusammenfassung:	The fabrication, electrical characterization and reliability study of copper through-silicon via (TSV) is reported. All the fabrication steps needed in this process have a process temperature
ISSN:	2150-5934 2150-5942
DOI:	10.1109/IMPACT.2013.6706634