Characterization of submillimeter-wave Schottky diodes in the 500-750 GHz band using micromachined on-wafer probes
For the first time, direct measurement and characterization of planar Schottky diodes using micromachined on-wafer probes operating from 500 to 750 GHz is described. The Schottky diodes are fabricated on a GaAs substrate and integrated into a coplanar waveguide to allow direct measurement of the dev...
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| creator | Hawasli, S. H. Bauwens, M. F. Lichtenberger, A. W. Barker, N. S. Weikle, R. M. |
| description | For the first time, direct measurement and characterization of planar Schottky diodes using micromachined on-wafer probes operating from 500 to 750 GHz is described. The Schottky diodes are fabricated on a GaAs substrate and integrated into a coplanar waveguide to allow direct measurement of the device calibrated scattering parameters using CPW probes. The measurements are used to establish and verify equivalent circuit models and parasitics for submillimeter-wave diodes that, previously, were based solely on simulation or scaling of measurements done at microwave frequencies. |
| doi_str_mv | 10.1109/MWSYM.2013.6697588 |
| format | Conference Proceeding |
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H. ; Bauwens, M. F. ; Lichtenberger, A. W. ; Barker, N. S. ; Weikle, R. M.</creator><creatorcontrib>Hawasli, S. H. ; Bauwens, M. F. ; Lichtenberger, A. W. ; Barker, N. S. ; Weikle, R. M.</creatorcontrib><description>For the first time, direct measurement and characterization of planar Schottky diodes using micromachined on-wafer probes operating from 500 to 750 GHz is described. The Schottky diodes are fabricated on a GaAs substrate and integrated into a coplanar waveguide to allow direct measurement of the device calibrated scattering parameters using CPW probes. 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The measurements are used to establish and verify equivalent circuit models and parasitics for submillimeter-wave diodes that, previously, were based solely on simulation or scaling of measurements done at microwave frequencies.</description><subject>Anodes</subject><subject>Coplanar waveguides</subject><subject>Frequency measurement</subject><subject>Integrated circuit modeling</subject><subject>on-wafer measurement</subject><subject>Probes</subject><subject>scattering parameters</subject><subject>Schottky diodes</subject><subject>Submillimeter-wave</subject><subject>Transmission line measurements</subject><issn>0149-645X</issn><issn>2576-7216</issn><isbn>9781467361767</isbn><isbn>1467361763</isbn><isbn>9781467361774</isbn><isbn>1467361771</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2013</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotkMFOAjEYhKvRRIK8gF76AsV22223R0MUTCAe0Kgn0nb_ulV2S9pFAk8vRk4zmXz5DoPQDaNjxqi-W7wtPxbjgjI-llKrsqrO0EirigmpuGRKqnM0KEoliSqYvEADyoQmUpTvV2iU8xel9A9ishigNGlMMq6HFA6mD7HD0eO8tW1Yr0MLx53szA_gpWti33_vcR1iDRmHDvcN4JJSokqKp7MDtqar8TaH7hO3waXYGteEDmocu6PDQ8KbFC3ka3TpzTrD6JRD9Pr48DKZkfnz9GlyPyeBqbIn4BgXjlXaK1pZbwsmjHNOUauVAw3eC2NppYqaCuM159pb4bl1zjMwxzZEt__eAACrTQqtSfvV6TH-C3fIX8k</recordid><startdate>201306</startdate><enddate>201306</enddate><creator>Hawasli, S. H.</creator><creator>Bauwens, M. F.</creator><creator>Lichtenberger, A. W.</creator><creator>Barker, N. S.</creator><creator>Weikle, R. M.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>201306</creationdate><title>Characterization of submillimeter-wave Schottky diodes in the 500-750 GHz band using micromachined on-wafer probes</title><author>Hawasli, S. H. ; Bauwens, M. F. ; Lichtenberger, A. W. ; Barker, N. S. ; Weikle, R. 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M.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Hawasli, S. H.</au><au>Bauwens, M. F.</au><au>Lichtenberger, A. W.</au><au>Barker, N. S.</au><au>Weikle, R. M.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Characterization of submillimeter-wave Schottky diodes in the 500-750 GHz band using micromachined on-wafer probes</atitle><btitle>2013 IEEE MTT-S International Microwave Symposium Digest (MTT)</btitle><stitle>MWSYM</stitle><date>2013-06</date><risdate>2013</risdate><spage>1</spage><epage>4</epage><pages>1-4</pages><issn>0149-645X</issn><eissn>2576-7216</eissn><eisbn>9781467361767</eisbn><eisbn>1467361763</eisbn><eisbn>9781467361774</eisbn><eisbn>1467361771</eisbn><abstract>For the first time, direct measurement and characterization of planar Schottky diodes using micromachined on-wafer probes operating from 500 to 750 GHz is described. The Schottky diodes are fabricated on a GaAs substrate and integrated into a coplanar waveguide to allow direct measurement of the device calibrated scattering parameters using CPW probes. 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| identifier | ISSN: 0149-645X |
| ispartof | 2013 IEEE MTT-S International Microwave Symposium Digest (MTT), 2013, p.1-4 |
| issn | 0149-645X 2576-7216 |
| language | eng |
| recordid | cdi_ieee_primary_6697588 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Anodes Coplanar waveguides Frequency measurement Integrated circuit modeling on-wafer measurement Probes scattering parameters Schottky diodes Submillimeter-wave Transmission line measurements |
| title | Characterization of submillimeter-wave Schottky diodes in the 500-750 GHz band using micromachined on-wafer probes |
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