Characterization of submillimeter-wave Schottky diodes in the 500-750 GHz band using micromachined on-wafer probes

For the first time, direct measurement and characterization of planar Schottky diodes using micromachined on-wafer probes operating from 500 to 750 GHz is described. The Schottky diodes are fabricated on a GaAs substrate and integrated into a coplanar waveguide to allow direct measurement of the device calibrated scattering parameters using CPW probes. The measurements are used to establish and verify equivalent circuit models and parasitics for submillimeter-wave diodes that, previously, were based solely on simulation or scaling of measurements done at microwave frequencies.