A 11% PAE, 15.8-dBm two-stage 90-GHz stacked-FET power amplifier in 45-nm SOI CMOS

A two-stage 90-GHz stacked-FET power amplifier is implemented in 45-nm SOI CMOS. Dual supply operation supports high gain, power and efficiency in the two-stage design. The amplifier exhibits greater than 15.8 dBm saturated output power with 10 dB peak power gain and achieves a record peak PAE of 11...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Agah, Amir, Jayamon, Jefy, Asbeck, Peter, Buckwalter, James, Larson, Lawrence
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Bandwidth CMOS integrated circuits CMOS SOI CMOS technology Field effect transistors Gain inter-stage matching millimeter-wave power amplifier Power amplifiers Power generation stacked PAs two-stage PA
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