A 11% PAE, 15.8-dBm two-stage 90-GHz stacked-FET power amplifier in 45-nm SOI CMOS

A 11% PAE, 15.8-dBm two-stage 90-GHz stacked-FET power amplifier in 45-nm SOI CMOS

A two-stage 90-GHz stacked-FET power amplifier is implemented in 45-nm SOI CMOS. Dual supply operation supports high gain, power and efficiency in the two-stage design. The amplifier exhibits greater than 15.8 dBm saturated output power with 10 dB peak power gain and achieves a record peak PAE of 11...

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Bibliographische Detailangaben
Hauptverfasser: Agah, Amir, Jayamon, Jefy, Asbeck, Peter, Buckwalter, James, Larson, Lawrence
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Bandwidth
CMOS integrated circuits
CMOS SOI
CMOS technology
Field effect transistors
Gain
inter-stage matching
millimeter-wave
power amplifier
Power amplifiers
Power generation
stacked PAs
two-stage PA
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Beschreibung
Zusammenfassung:A two-stage 90-GHz stacked-FET power amplifier is implemented in 45-nm SOI CMOS. Dual supply operation supports high gain, power and efficiency in the two-stage design. The amplifier exhibits greater than 15.8 dBm saturated output power with 10 dB peak power gain and achieves a record peak PAE of 11%. The PAE remains above 8% from 86 to 94 GHz. It occupies 0.05 mm 2 excluding pads.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2013.6697504