Extremely low-frequency measurements using an active bias tee

Extremely low-frequency measurements using an active bias tee

An active bias tee suitable for small- and large-signal low-frequency (5 Hz to 400 kHz) characterization of electron devices has been designed and manufactured. Different experimental results, carried out on 0.25 μm GaAs and GaN HEMTs, confirm the validity of the proposed bias circuit.

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Bibliographische Detailangaben
Hauptverfasser: Nalli, Andrea, Raffo, Antonio, Avolio, Gustavo, Vadala, Valeria, Bosi, Gianni, Schreurs, Dominique M. M.-P, Vannini, Giorgio
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Active inductors
Bias tee
Current measurement
Frequency measurement
Microwave amplifiers
Microwave circuits
Microwave transistors
semiconductor device measurements
semiconductor device modeling
thermal effects
Transistors
traps
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Beschreibung
Zusammenfassung:An active bias tee suitable for small- and large-signal low-frequency (5 Hz to 400 kHz) characterization of electron devices has been designed and manufactured. Different experimental results, carried out on 0.25 μm GaAs and GaN HEMTs, confirm the validity of the proposed bias circuit.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2013.6697402