Increase of the Robustness of the junction terminations of power devices by a lateral variation of the Emitter Efficiency

Increase of the Robustness of the junction terminations of power devices by a lateral variation of the Emitter Efficiency

A new diode technology called Emitter Controlled (EC)-HDR (High Dynamic Robustness) that allows a pronounced enhancement in switching safe-operating area has been developed. For the first time, the concept used for this drastic improvement is presented. The same principle has been applied to the Ins...

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Bibliographische Detailangaben
Hauptverfasser: Schulze, H-J, Bauer, J-G, Falck, E., Niedernostheide, F-J, Biermann, J., Dutemeyer, T., Humbel, O., Schieber, A.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Charge carriers
Insulated gate bipolar transistors
Integrated circuits
Junctions
Robustness
Semiconductor diodes
Switches
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Beschreibung
Zusammenfassung:A new diode technology called Emitter Controlled (EC)-HDR (High Dynamic Robustness) that allows a pronounced enhancement in switching safe-operating area has been developed. For the first time, the concept used for this drastic improvement is presented. The same principle has been applied to the Insulated Gate Bipolar Transistor (IGBT).
ISSN:1063-6854
1946-0201
DOI:10.1109/ISPSD.2013.6694435