HBT SiGe technology dedicated to ultra low phase noise applications

This paper presents a SiGe HBT technology featuring high attractive performances devices both in terms of microwave behavior (fmax higher than 40 GHz) and low-frequency noise (1/f corner noise frequency lower than 300 Hz), through both an appropriate technology and passivation process. SiGe HBTs suc...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	Van Haaren, B., Gruhle, A., Regis, M., Mahner, C., Escotte, L., Llopis, O., Plana, R., Graffeuil, J.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Appropriate technology Frequency Germanium silicon alloys Heterojunction bipolar transistors Low-frequency noise Microwave devices Microwave technology Passivation Phase noise Silicon germanium
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	This paper presents a SiGe HBT technology featuring high attractive performances devices both in terms of microwave behavior (fmax higher than 40 GHz) and low-frequency noise (1/f corner noise frequency lower than 300 Hz), through both an appropriate technology and passivation process. SiGe HBTs successfully used for the realization of ultra low phase noise microwave oscillators featuring -135 dBc/Hz at 10 kHz offset.
DOI:	10.1109/EDMO.1997.668621