Modeling of SAW resonators fabricated on GaN/Si

Modeling of SAW resonators fabricated on GaN/Si

This paper presents new 2D and 3D numerical models for surface acoustic wave resonators (SAW) on GaN/Si substrate, working on frequencies above 5 GHz. The interdigital transducers (IDT) have fingers and interdigit spacings of 200 nm wide. The simulations are compared with experimental results obtain...

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Hauptverfasser: Stefanescu, A., Buiculescu, V., Dinescu, A., Cismaru, A., Muller, A., Konstantinidis, G., Stavrinidis, A., Stavrinidis, G.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Analytical models
FEM modeling
Finite element analysis
Gallium nitride
GaN
Integrated circuit modeling
Resonant frequency
SAW resonator
Silicon
Surface acoustic waves
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Zusammenfassung:This paper presents new 2D and 3D numerical models for surface acoustic wave resonators (SAW) on GaN/Si substrate, working on frequencies above 5 GHz. The interdigital transducers (IDT) have fingers and interdigit spacings of 200 nm wide. The simulations are compared with experimental results obtained for one port SAW resonators.
DOI:10.1109/COMCAS.2013.6685281