Body-Tied Germanium Tri-Gate Junctionless PMOSFET With In-Situ Boron Doped Channel

In this paper, we demonstrate body-tied Ge tri-gate junctionless (JL) p-channel MOSFETs directly on Si. Our tri-gate JL-PFET exhibits higher current than the conventional inversion-mode transistor through in-situ heavily doped technique and trimming down Ge fin width. We show that the JL-PFET with t...

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Veröffentlicht in:	IEEE electron device letters 2014-01, Vol.35 (1), p.12-14
Hauptverfasser:	CHEN, Che-Wei, CHUNG, Cheng-Ting, TZENG, Ju-Yuan, CHANG, Pang-Sheng, LUO, Guang-Li, CHIEN, Chao-Hsin
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences body-tied Electronics Exact sciences and technology Germanium in-situ heavily doped Junctionless Logic gates MOSFET circuits Resistance Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Substrates Transistors tri-gate
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