Body-Tied Germanium Tri-Gate Junctionless PMOSFET With In-Situ Boron Doped Channel

In this paper, we demonstrate body-tied Ge tri-gate junctionless (JL) p-channel MOSFETs directly on Si. Our tri-gate JL-PFET exhibits higher current than the conventional inversion-mode transistor through in-situ heavily doped technique and trimming down Ge fin width. We show that the JL-PFET with tri-gate structure has excellent I ON /I OFF ratio and good short channel effect control on the channel potential. The current ratio is of ~6×10 3 (ID) at V DS =-0.1 V, V GS =-3, and 0 V. The relatively low OFF-current is of 6 nA/ μm at V DS =-0.1 V and V GS =0 V. The subthreshold swing of 203 mV/decade and drain induced barrier lowering of 220 mV/V are reported at L G =120 nm.