High Mobility Bilayer Metal-Oxide Thin Film Transistors Using Titanium-Doped InGaZnO

We report a high performance indium-gallium-zinc oxide (IGZO)/IGZO:Ti bilayer metal-oxide thin-film transistor (TFT) with a low drive voltage of . Compared with conventional IGZO TFTs, the novel bilayer metal-oxide TFTs through IGZO thickness modulation can reach the lowest off current of 1.6×10 -11...

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Veröffentlicht in:	IEEE electron device letters 2014-01, Vol.35 (1), p.87-89
Hauptverfasser:	HSU, Hsiao-Hsuan, CHANG, Chun-Yen, CHENG, Chun-Hu, CHIOU, Shan-Haw, HUANG, Chiung-Hui
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Dielectrics Electronics Exact sciences and technology gettering indium-gallium-zinc oxide (IGZO) Logic gates mobility Modulation Performance evaluation Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Thin film transistors thin-film transistor (TFT) Threshold voltage Transistors {\rm TiO}_{2}
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Beschreibung
Zusammenfassung:	We report a high performance indium-gallium-zinc oxide (IGZO)/IGZO:Ti bilayer metal-oxide thin-film transistor (TFT) with a low drive voltage of . Compared with conventional IGZO TFTs, the novel bilayer metal-oxide TFTs through IGZO thickness modulation can reach the lowest off current of 1.6×10 -11 A, smallest sub-threshold swing of 73 mV/decade, and highest mobility of 63 cm 2 /Vs, which may create the potential application for high resolution display.
ISSN:	0741-3106 1558-0563
DOI:	10.1109/LED.2013.2290707