Compact Model for Ultrathin Low Electron Effective Mass Double Gate MOSFET

Compact Model for Ultrathin Low Electron Effective Mass Double Gate MOSFET

We present a core compact model for undoped, high mobility, and low density of states materials in a double gate device architecture. Analytical equations for calculating current and charge are presented in a drift-diffusion compact modeling framework. This model accurately handles both Fermi-Dirac...

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Veröffentlicht in:IEEE transactions on electron devices 2014-02, Vol.61 (2), p.308-313
Hauptverfasser: Roy, Ananda S., Mudanai, Sivakumar P., Basu, Dipanjan, Stettler, Mark A.
Format: Artikel
Sprache:eng
Schlagworte:
Charge
compact model
Effective mass
Fermi-Dirac statistics
III-V
Logic gates
Mathematical model
MOSFET
Numerical models
Quantum capacitance
Semiconductor device modeling
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Beschreibung
Zusammenfassung:We present a core compact model for undoped, high mobility, and low density of states materials in a double gate device architecture. Analytical equations for calculating current and charge are presented in a drift-diffusion compact modeling framework. This model accurately handles both Fermi-Dirac statistics and bias-dependent diffusivity. The results from analytical equations are validated against exact numerical charge and current integrations and device simulation.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2013.2290779