Suppression of Read Disturb Fail Caused by Boosting Hot Carrier Injection Effect for 3-D Stack NAND Flash Memories

A new bias pulse method was proposed to suppress read disturbance in unselected strings of 3-D stack NAND flash memories. Using the proposed read method, we could suppress effectively a large cell Vth shift generated by boosting hot carrier injection. As a result, the cell Vth shift in unselected st...

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Veröffentlicht in:	IEEE electron device letters 2014-01, Vol.35 (1), p.42-44
Hauptverfasser:	CHOE, Byeong-In, LEE, Jung-Kyu, PARK, Byung-Gook, LEE, Jong-Ho
Format:	Artikel
Sprache:	eng
Schlagworte:	3-D stack NAND flash Applied sciences Ash Boosting Circuit properties Computer architecture Design. Technologies. Operation analysis. Testing Digital circuits Electric potential Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Hot carrier injection Integrated circuits Integrated circuits by function (including memories and processors) Microprocessors NAND flash read disturb Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Stress
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Beschreibung
Zusammenfassung:	A new bias pulse method was proposed to suppress read disturbance in unselected strings of 3-D stack NAND flash memories. Using the proposed read method, we could suppress effectively a large cell Vth shift generated by boosting hot carrier injection. As a result, the cell Vth shift in unselected string is quite similar to normal read disturbance in select string. The proposed read method was verified by both measurement and simulation.
ISSN:	0741-3106 1558-0563
DOI:	10.1109/LED.2013.2288991