Density-dependent electron scattering in photoexcited GaAs

Density-dependent electron scattering in photoexcited GaAs

In a series of systematic optical pump - terahertz probe experiments we study the density-dependent electron scattering rate in photoexcited GaAs in a large range of carrier densities. The electron scattering time decreases by as much as a factor of 4, from 320 to 60 fs, as the electron density chan...

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Hauptverfasser: Mics, Zoltan, D'Angio, Andrea, Jensen, Soren A., Bonn, Mischa, Turchinovich, Dmitry
Format: Tagungsbericht
Sprache:eng
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Zusammenfassung:In a series of systematic optical pump - terahertz probe experiments we study the density-dependent electron scattering rate in photoexcited GaAs in a large range of carrier densities. The electron scattering time decreases by as much as a factor of 4, from 320 to 60 fs, as the electron density changes by 4 orders of magnitude, from 10 15 to 10 19 cm -3 .
ISSN:2162-2027
DOI:10.1109/IRMMW-THz.2013.6665922