Terahertz emission from quantum-sized silicon p+ - n junctions
We present the first findings of the THz emission from the ultra-narrow p-type Si quantum well confined by the superconductor (SC) δ-barriers on the n-type Si(100) surface. The EL spectra revealed by the voltage applied along the Si-QW plane appear to result from the value of the SC energy gap.
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| creator | Bagraev, Nikolay T. Danilovskii, Eduard Yu Gets, Dmitrii S. Kaveev, Andrey K. Klyachkin, Leonid E. Kropotov, Grigory I. Kudryavtsev, Andrey A. Kuzmin, Roman V. Malyarenko, Anna M. Tzibizov, Ivan A. Tsypishka, Dmitry I. Vinerov, Ilya A. |
| description | We present the first findings of the THz emission from the ultra-narrow p-type Si quantum well confined by the superconductor (SC) δ-barriers on the n-type Si(100) surface. The EL spectra revealed by the voltage applied along the Si-QW plane appear to result from the value of the SC energy gap. |
| doi_str_mv | 10.1109/IRMMW-THz.2013.6665776 |
| format | Conference Proceeding |
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| identifier | ISSN: 2162-2027 |
| ispartof | 2013 38th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2013, p.1-1 |
| issn | 2162-2027 |
| language | eng |
| recordid | cdi_ieee_primary_6665776 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Boron Josephson junctions Junctions Lithography Phase modulation Silicon Superconducting photodetectors |
| title | Terahertz emission from quantum-sized silicon p+ - n junctions |
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