Terahertz emission from quantum-sized silicon p+ - n junctions

Terahertz emission from quantum-sized silicon p+ - n junctions

We present the first findings of the THz emission from the ultra-narrow p-type Si quantum well confined by the superconductor (SC) δ-barriers on the n-type Si(100) surface. The EL spectra revealed by the voltage applied along the Si-QW plane appear to result from the value of the SC energy gap.

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Bagraev, Nikolay T., Danilovskii, Eduard Yu, Gets, Dmitrii S., Kaveev, Andrey K., Klyachkin, Leonid E., Kropotov, Grigory I., Kudryavtsev, Andrey A., Kuzmin, Roman V., Malyarenko, Anna M., Tzibizov, Ivan A., Tsypishka, Dmitry I., Vinerov, Ilya A.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Boron
Josephson junctions
Junctions
Lithography
Phase modulation
Silicon
Superconducting photodetectors
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We present the first findings of the THz emission from the ultra-narrow p-type Si quantum well confined by the superconductor (SC) δ-barriers on the n-type Si(100) surface. The EL spectra revealed by the voltage applied along the Si-QW plane appear to result from the value of the SC energy gap.
ISSN:2162-2027
DOI:10.1109/IRMMW-THz.2013.6665776