A 200-245 GHz Balanced Frequency Doubler with Peak Output Power of +2 dBm

A 200-245 GHz Balanced Frequency Doubler with Peak Output Power of +2 dBm

This paper presents a wideband 90 nm SiGe BiCMOS frequency multiplier at 200-245 GHz. The balanced multiplier results in a low first harmonic component, and uses a reflector at the base nodes to reflect the second harmonics to transistors for improved efficiency. The measured output power is > -2...

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Bibliographische Detailangaben
Hauptverfasser: Hsin-Chang Lin, Rebeiz, Gabriel M.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Gain
Harmonic analysis
Loss measurement
Power generation
Power measurement
Silicon germanium
Transistors
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Beschreibung
Zusammenfassung:This paper presents a wideband 90 nm SiGe BiCMOS frequency multiplier at 200-245 GHz. The balanced multiplier results in a low first harmonic component, and uses a reflector at the base nodes to reflect the second harmonics to transistors for improved efficiency. The measured output power is > -2 dBm at 200-245 GHz with a peak value of +2 dBm at 224-228 GHz and a conversion gain of -15 dB. To the author's knowledge, this is the highest power wideband doubler at 200-250 GHz.
ISSN:1550-8781
2374-8443
DOI:10.1109/CSICS.2013.6659189