GalnP Multiwafer Growth (7x 2", 5 x 3") by LP-MOVPE for HBT, Laser LED or Solar Cells

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Hauptverfasser:	Schmitz, D., Lengeling, G., Strauch, G., Hergeth, J., Jurgensen, H.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Costs Epitaxial growth Epitaxial layers Heterojunction bipolar transistors Inductors Lattices Light emitting diodes Photovoltaic cells Semiconductor lasers Throughput
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creator	Schmitz, D. Lengeling, G. Strauch, G. Hergeth, J. Jurgensen, H.
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doi_str_mv	10.1109/MOVPE.1992.664983
format	Conference Proceeding
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identifier	ISBN: 9780879426521
ispartof	Sixth International Conference Metalorganic Vapor Phase Epitaxy, 1992, p.142-142
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language	eng
recordid	cdi_ieee_primary_664983
source	IEEE Electronic Library (IEL) Conference Proceedings
subjects	Costs Epitaxial growth Epitaxial layers Heterojunction bipolar transistors Inductors Lattices Light emitting diodes Photovoltaic cells Semiconductor lasers Throughput
title	GalnP Multiwafer Growth (7x 2", 5 x 3") by LP-MOVPE for HBT, Laser LED or Solar Cells
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