15 kV SiC IGBT based three-phase three-level modular-leg power converter
The 15kV /20A, 4H-SiC n-IGBT is the state-of-the-art high voltage power semiconductor device. The transformerless intelligent power substation (TIPS) [1] for 13.8kV grid interfacing is built using this device. It is proposed to use a three-phase, three-level, diode clamped topology as the front end...
Gespeichert in:
Hauptverfasser: | , , , , , , , , |
---|---|
Format: | Tagungsbericht |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | The 15kV /20A, 4H-SiC n-IGBT is the state-of-the-art high voltage power semiconductor device. The transformerless intelligent power substation (TIPS) [1] for 13.8kV grid interfacing is built using this device. It is proposed to use a three-phase, three-level, diode clamped topology as the front end converter (FEC) in TIPS. A modular-leg structure has been employed for FEC. In modular-leg structure, each phase-leg will have its own DC-link capacitors and a low inductance bus-bar. However, modular-leg structure adds complexity in DC bus over-load protection, which is studied in this paper. Experimental results of modular-leg converter at 3kV DC link voltage and scale down prototype of AC switch for DC bus fault protection are presented. |
---|---|
ISSN: | 2329-3721 2329-3748 |
DOI: | 10.1109/ECCE.2013.6647132 |