Limitation of DC-side stray inductance by considering over voltage and short-circuit current

Limitation of DC-side stray inductance by considering over voltage and short-circuit current

This paper presents a design procedure of the DC-side stray inductance for high-speed switching circuit using SiC power devices considering an over voltage and a short-circuit current. In order to verify the analysis results of the over voltage and the short-circuit current, the experiments are cond...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Wada, Keiji, Ando, Masato
Format: Tagungsbericht
Sprache:eng ; jpn
Schlagworte:
Bus Bar
Design
Inductance
Logic gates
MOSFET
Reliability
Resistance
Short-circuit currents
Silicon carbide (SiC)
Switches
Voltage control
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:This paper presents a design procedure of the DC-side stray inductance for high-speed switching circuit using SiC power devices considering an over voltage and a short-circuit current. In order to verify the analysis results of the over voltage and the short-circuit current, the experiments are conducted. Moreover, the design procedure of the DC-side wiring structure considering the stray inductance is discussed with using an inductance map.
DOI:10.1109/EPE.2013.6634460