Characterization of low frequency noise in nanowire FETs considering variability and quantum effects

Nanowire FETs (NWFETs) having gate-all-around (GAA) structure have been developed due to their novel short channel effect immunity and gate controllability [1]. However, the variability in electrical parameters including the drain current (I d ) and transconductance (g m ) has been observed in such ultra-scaled channel dimension down to 10 nm [2]. The diameter (dNW) of the channel region has also played an important role to manufacture large scale integrated circuit. At this point, this paper focuses on the variation in dc and noise parameters and characterizes the low frequency noise of the NWFETs considering the quantum effect.