Reverse-conducting-IGBTs - A new IGBT technology setting new benchmarks in traction converters

Reverse-conducting-IGBTs - A new IGBT technology setting new benchmarks in traction converters

In this paper the main advantages of 6.5 kV Reverse Conducting IGBTs (RC-IGBTs) compared to state-of-the-art two-chip IGBT/Diode solutions for traction applications are discussed. The experimental results show the potential of RC-IGBTs as well as the increased requirements on the gate control strate...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Hermann, Robert, Krafft, Eberhard Ulrich, Marz, Andreas
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Charge carriers
Diode
Electronic mail
Facsimile
IGBT
Insulated gate bipolar transistors
Logic gates
Semiconductor diodes
Switches
Traction converter
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:In this paper the main advantages of 6.5 kV Reverse Conducting IGBTs (RC-IGBTs) compared to state-of-the-art two-chip IGBT/Diode solutions for traction applications are discussed. The experimental results show the potential of RC-IGBTs as well as the increased requirements on the gate control strategy.
DOI:10.1109/EPE.2013.6631806