Metrological procurement for modeling conductivity of ultra thin dielectrics with non-uniform boundary by means of TCAD SENTAURUS
Is developed the graphic and technological model of reprogrammed element memory of the actuation device of receiver Glonass navigator in the environment of SENTAURUS TCAD. Is calculation of distribution of electric fields in thin dielectrics on a surface of a shutter with a non-uniform horizontal an...
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creator | Perov, G. V. Glukhov, A. V. Alekseev, A. A. Sedinin, V. I. |
description | Is developed the graphic and technological model of reprogrammed element memory of the actuation device of receiver Glonass navigator in the environment of SENTAURUS TCAD. Is calculation of distribution of electric fields in thin dielectrics on a surface of a shutter with a non-uniform horizontal and vertical profile of relief. The model can be used for calculation of electronic and ionic currents, of conductivity of a dielectric on a shutter depending on heterogeneity of border, definition of their limits parametr of element memory. |
doi_str_mv | 10.1109/APEIE.2012.6628969 |
format | Conference Proceeding |
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V. ; Glukhov, A. V. ; Alekseev, A. A. ; Sedinin, V. I.</creator><creatorcontrib>Perov, G. V. ; Glukhov, A. V. ; Alekseev, A. A. ; Sedinin, V. I.</creatorcontrib><description>Is developed the graphic and technological model of reprogrammed element memory of the actuation device of receiver Glonass navigator in the environment of SENTAURUS TCAD. Is calculation of distribution of electric fields in thin dielectrics on a surface of a shutter with a non-uniform horizontal and vertical profile of relief. 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The model can be used for calculation of electronic and ionic currents, of conductivity of a dielectric on a shutter depending on heterogeneity of border, definition of their limits parametr of element memory.</description><subject>Communications technology</subject><subject>Conductivity</subject><subject>Dielectrics</subject><subject>Educational institutions</subject><subject>Procurement</subject><subject>Semiconductor devices</subject><subject>Three-dimensional displays</subject><isbn>1467328421</isbn><isbn>9781467328425</isbn><isbn>9781467328401</isbn><isbn>1467328405</isbn><isbn>9781467328418</isbn><isbn>1467328413</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2012</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNo1kMlOwzAARI0QElD6A3DxD6R4iZP4GJVQKpVFND1XjpfWKLErxwH1yJ8TRDmN5vBGMwPALUYzjBG_L9-qZTUjCJNZlpGCZ_wMTHle4DTLKSlShM_B9b8h-BJM-_4DITTCGWbsCnw_6xh863dWihYegpdD0J12ERofYOeVbq3bQemdGmS0nzYeoTdwaGMQMO6tg8rqVssYrOzhl4176LxLBmdHvoONH5wS4QibI-y0cP0vXM_LB7iuXupy875Z34ALI9peT086AfVjVc-fktXrYjkvV4nlKCYNUkKaPMeEZpJIg4rMUIwNU1QxjHOeUsFySo1UKCWSiYZRRXnO5LicM0wn4O4v1mqtt4dgu7HW9nQa_QFknWHS</recordid><startdate>201210</startdate><enddate>201210</enddate><creator>Perov, G. 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I.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-b0dacf771236c2cf086f311f5d3d5117943a5733fcd042c5ab53d3975c3289513</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng ; rus</language><creationdate>2012</creationdate><topic>Communications technology</topic><topic>Conductivity</topic><topic>Dielectrics</topic><topic>Educational institutions</topic><topic>Procurement</topic><topic>Semiconductor devices</topic><topic>Three-dimensional displays</topic><toplevel>online_resources</toplevel><creatorcontrib>Perov, G. V.</creatorcontrib><creatorcontrib>Glukhov, A. V.</creatorcontrib><creatorcontrib>Alekseev, A. A.</creatorcontrib><creatorcontrib>Sedinin, V. I.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Perov, G. V.</au><au>Glukhov, A. V.</au><au>Alekseev, A. A.</au><au>Sedinin, V. I.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Metrological procurement for modeling conductivity of ultra thin dielectrics with non-uniform boundary by means of TCAD SENTAURUS</atitle><btitle>2012 IEEE 11th International Conference on Actual Problems of Electronics Instrument Engineering (APEIE)</btitle><stitle>APEIE</stitle><date>2012-10</date><risdate>2012</risdate><spage>112</spage><epage>115</epage><pages>112-115</pages><isbn>1467328421</isbn><isbn>9781467328425</isbn><eisbn>9781467328401</eisbn><eisbn>1467328405</eisbn><eisbn>9781467328418</eisbn><eisbn>1467328413</eisbn><abstract>Is developed the graphic and technological model of reprogrammed element memory of the actuation device of receiver Glonass navigator in the environment of SENTAURUS TCAD. Is calculation of distribution of electric fields in thin dielectrics on a surface of a shutter with a non-uniform horizontal and vertical profile of relief. The model can be used for calculation of electronic and ionic currents, of conductivity of a dielectric on a shutter depending on heterogeneity of border, definition of their limits parametr of element memory.</abstract><pub>IEEE</pub><doi>10.1109/APEIE.2012.6628969</doi><tpages>4</tpages></addata></record> |
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language | eng ; rus |
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source | IEEE Electronic Library (IEL) Conference Proceedings |
subjects | Communications technology Conductivity Dielectrics Educational institutions Procurement Semiconductor devices Three-dimensional displays |
title | Metrological procurement for modeling conductivity of ultra thin dielectrics with non-uniform boundary by means of TCAD SENTAURUS |
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