Novel silicon-based tunneling FET with junction engineering and gate configuration for low power applications (invited)

In this paper, two novel silicon-based TFETs are discussed, including Si junction-modulated TFET (JTFET) with the equivalent function to achieve ideally abrupt doping profile and multi-finger-gate TFET of dopant-segregated Schottky Barrier source (mFSB-TFET) with adaptive operation mechanism for better performance tradeoff.