Strain effects on valence band structure of In0.7Ga0.3As: From bulk to thin film

Strain effects on valence band structure of In0.7Ga0.3As: From bulk to thin film

Strain effects on valence band structure in bulk and thin film In 0.7 Ga 0.3 As was presented, including in-plane biaxial and uniaxial stress. The impact on energy band splitting and warping, and effective mass are evaluated by 6×6 k·p method. The dependence of the valence band structures on the bod...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Pengying Chang, Xiaoyan Liu, Lang Zeng, Jieyu Qin, Gang Du
Format: Tagungsbericht
Sprache:eng ; jpn
Schlagworte:
Compounds
Educational institutions
In 0.7 Ga 0.3 As
Logic gates
Six-band k·p method
Strain
Strain effect
Stress
Valence band structure
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Zusammenfassung:Strain effects on valence band structure in bulk and thin film In 0.7 Ga 0.3 As was presented, including in-plane biaxial and uniaxial stress. The impact on energy band splitting and warping, and effective mass are evaluated by 6×6 k·p method. The dependence of the valence band structures on the body thickness was also studied.
DOI:10.1109/EDSSC.2013.6628065