Self-aligned, gated field emitter arrays with integrated high-aspect-ratio current limiters

Self-aligned, gated field emitter arrays with integrated high-aspect-ratio current limiters

We report the fabrication of arrays of silicon field emitters with 1-micron pitch with integrated, self-aligned extractor gates and 10-micron tall high-aspect-ratio silicon vertical current limiters.

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Bibliographische Detailangaben
Hauptverfasser: Guerrera, Stephen A., Akinwande, Akintunde I.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Cathodes
Current limiters
Etching
Fabrication
Field emitter arrays
Logic gates
Silicon
Vertical Current Limiters
Vertical Ungated Field-Effect Transistors
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Beschreibung
Zusammenfassung:We report the fabrication of arrays of silicon field emitters with 1-micron pitch with integrated, self-aligned extractor gates and 10-micron tall high-aspect-ratio silicon vertical current limiters.
ISSN:2164-2370
DOI:10.1109/IVNC.2013.6624726