RESURF p-n Diode With a Buried Layer, a Comprehensive Study

In this paper, important parameters of the p-buried layer of a high-voltage reduced surface field p-n diode are analyzed and discussed in terms of effects on device performance, including breakdown voltage and specific turn-on resistance, R on,sp . Guidelines for optimizing the vertical position, la...

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Veröffentlicht in:	IEEE transactions on electron devices 2013-11, Vol.60 (11), p.3835-3841
Hauptverfasser:	YANG, Fu-Jen, JENG GONG, SU, Ru-Yi, TSAI, Chun-Lin, TUAN, Hsiao-Chin, HUANG, Chih-Fang
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Avalanche breakdown Breakdown voltage buried layer Compound structure devices Diodes Electric potential Electrical engineering. Electrical power engineering Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology High-voltage techniques p-n diode and reduced surface field (RESURF) power device Power electronics, power supplies Semiconductor diodes Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Voltage control
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Beschreibung
Zusammenfassung:	In this paper, important parameters of the p-buried layer of a high-voltage reduced surface field p-n diode are analyzed and discussed in terms of effects on device performance, including breakdown voltage and specific turn-on resistance, R on,sp . Guidelines for optimizing the vertical position, lateral location, and doping concentration of the p-buried layer are suggested. The experimental results demonstrate that the p-n diode with the proposed p-buried layer optimization design can improve breakdown voltage by 30.7% but only increases 2.7% in specific on-resistance R on,sp .
ISSN:	0018-9383 1557-9646
DOI:	10.1109/TED.2013.2283582