A special failure analysis process to save some de-caped recovered cases

For some High power analog ICs, with a failure mode that some high side MOSFETs could not be turned on, they recovered after de-capsulation by fuming nitric acid, which resulted in the undetermined failure root cause. A hypothesis was proposed that there may be a foreign matter inducing gate short s...

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Hauptverfasser: Chunlei Wu, Suying Yao, Gaojie Wen, Li Tian, Miao Wu, Diwei Fan, Wang, Winter
Format: Tagungsbericht
Sprache:eng
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Zusammenfassung:For some High power analog ICs, with a failure mode that some high side MOSFETs could not be turned on, they recovered after de-capsulation by fuming nitric acid, which resulted in the undetermined failure root cause. A hypothesis was proposed that there may be a foreign matter inducing gate short source in a high side MOSFET in the power die as there is no passivation covered the MOSFET. For confirming this hypothesis and avoiding recovering, a special failure analysis process was employed in a couple of cases. The hypothesis was confirmed and the failure mechanism was revealed thanks to this special failure analysis process.
ISSN:1946-1542
1946-1550
DOI:10.1109/IPFA.2013.6599197