The Impact of n-p-n Selector-Based Bipolar RRAM Cross-Point on Array Performance

Recently, we have presented a circuit model of the n-p-n selector, validated by experimentally calibrated TCAD data and implemented in SPICE for cross-point memory array performance analysis. In this paper, we study the array circuit performance during memory operations and present five interesting...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	IEEE transactions on electron devices 2013-10, Vol.60 (10), p.3385-3392
Hauptverfasser:	Mandapati, Raju, Borkar, Abhijit Shripat, Srinivasan, V. S. Senthil, Bafna, Pranil, Karkare, Prateek, Lodha, Saurabh, Ganguly, Udayan
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Arrays Bipolar Resistive RAM (RRAM) circuit model cross-point memory array Degradation Design. Technologies. Operation analysis. Testing Doping Electric, optical and optoelectronic circuits Electronics Exact sciences and technology Integrated circuit modeling Integrated circuits Integrated circuits by function (including memories and processors) Magnetic and optical mass memories n-p-n selector Performance evaluation punch-through bipolar selector device Resistance resistance ratio (RR) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Storage and reproduction of information Theoretical study. Circuits analysis and design Wires
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!