Numerical and experimental characterization of single- and double-gate race-track-shaped field emitter structures
In this paper, numerical and experimental characterization of new singleand double-gate race-track-shaped field emitter structures are reported. The race-track-shaped edge emission is used to provide good uniformity and large field emission current density, and the double-gate control is used to pro...
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Veröffentlicht in: | IEEE transactions on electron devices 1998-02, Vol.45 (2), p.554-559 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | In this paper, numerical and experimental characterization of new singleand double-gate race-track-shaped field emitter structures are reported. The race-track-shaped edge emission is used to provide good uniformity and large field emission current density, and the double-gate control is used to provide small turn-on voltage and minimum gate current. Experimental results show that the turn-on voltage of the single-gate structure is approximately 100 V, and the field emission current density is approximately 2.4 A/cm/sup 2/. Furthermore, field emission characteristics of the single- and double-gate structures are numerically simulated. Results show that turn-on voltage of the double-gate structure is reduced by 30% and ratio of anode current to gate current is increased by 36 times compared to that of the single-gate structure at a gate voltage of 350 V. |
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ISSN: | 0018-9383 1557-9646 |
DOI: | 10.1109/16.658693 |