Increasing VG-type 3D NAND flash cell density by using ultra-thin poly-silicon channels

Increasing VG-type 3D NAND flash cell density by using ultra-thin poly-silicon channels

Z-direction pitch (stacking period) scaling is critical to the ultimate number of stacking of 3D NAND Flash. In this work, we study the ultra-thin (

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Bibliographische Detailangaben
Hauptverfasser: Teng-Hao Yeh, Pei-Ying Du, Tzu-Hsuan Hsu, Wei-Chen Chen, Hang-Ting Lue, Yen-Hao Shih, Yu-De Huang, Han-Hui Hsu, Lo-Yueh Lin, Ya-Chin King, Tahone Yang, Chih-Yuan Lu
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Arrays
BE-SONOS
charge trapping
Flash memories
Logic gates
Performance evaluation
Programming
Stacking
ultra-thin TFT device
Very large scale integration
VG-type 3D NAND Flash
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Beschreibung
Zusammenfassung:Z-direction pitch (stacking period) scaling is critical to the ultimate number of stacking of 3D NAND Flash. In this work, we study the ultra-thin (
ISSN:2159-483X
DOI:10.1109/IMW.2013.6582118