Highly reliable ReRAM technology with encapsulation process for 20nm and beyond

Highly reliable ReRAM technology with encapsulation process for 20nm and beyond

ReRAM cell performance and reliability have been improved through process optimization. Encapsulated ReRAM cell with SiN capping layer shows excellent endurance, read disturb, and retention characteristics. We demonstrated that effective oxygen barrier encapsulation is critical for keeping ReRAM per...

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Bibliographische Detailangaben
Hauptverfasser: Dong-Jun Seong, Min Kyu Yang, Hyunsu Ju, Jung Moo Lee, Eunmi Kim, Seungjae Jung, Jinwoo Lee, Gun Hwan Kim, Seol Choi, Lijie Zhang, Seong-Geon Park, Youn Seon Kang, In-Gyu Baek, Jungdal Choi, Ho-Kyu Kang, Eunseung Jung
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Degradation
Encapsulation
Oxidation
Performance evaluation
Reliability
Resistance
Silicon compounds
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Beschreibung
Zusammenfassung:ReRAM cell performance and reliability have been improved through process optimization. Encapsulated ReRAM cell with SiN capping layer shows excellent endurance, read disturb, and retention characteristics. We demonstrated that effective oxygen barrier encapsulation is critical for keeping ReRAM performance in an aggressively scaled technology node.
ISSN:2159-483X
DOI:10.1109/IMW.2013.6582093