Implementation of INGaP/GaAs HBT MMIC PA with Gain-Expansion Drive-Amplifier and Doherty Structure

Implementation of INGaP/GaAs HBT MMIC PA with Gain-Expansion Drive-Amplifier and Doherty Structure

In this paper, performance improvement of MMIC Power Amplifier using InGaP/GaAs HBT process is studied. To meet 3.9G and 4G mobile communications service demand, a power amplifier with improved efficiency and linearity that utilizes the Doherty structure and gain-expansion drive-amplifier is designe...

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Bibliographische Detailangaben
Hauptverfasser: Jeong-Seok Jang, Kyoung-Hak Lee
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Gallium arsenide
Heterojunction bipolar transistors
Linearity
MMICs
Power amplifiers
Power generation
Semiconductor device measurement
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Beschreibung
Zusammenfassung:In this paper, performance improvement of MMIC Power Amplifier using InGaP/GaAs HBT process is studied. To meet 3.9G and 4G mobile communications service demand, a power amplifier with improved efficiency and linearity that utilizes the Doherty structure and gain-expansion drive-amplifier is designed and implemented. In the measurement results, proposed amplifier has P1dB of 27.3dBm, efficiency of 15.2%@10dB back-off and OIP3 of 48.5.
ISSN:2162-9048
DOI:10.1109/ICISA.2013.6579504