Terahertz current noise in n+nn+ diodes
We present an analytical model for the calculation of the spectral density of current fluctuations in n + nn + diodes at high frequency. The model takes into account the synchronous motion of the free carriers in each region of the structure, the so-called "returning" carriers and the plas...
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| Format: | Tagungsbericht |
| Sprache: | eng |
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| Zusammenfassung: | We present an analytical model for the calculation of the spectral density of current fluctuations in n + nn + diodes at high frequency. The model takes into account the synchronous motion of the free carriers in each region of the structure, the so-called "returning" carriers and the plasma resonances at the n + n homojunctions. The current noise spectrum exhibits resonances in the terahertz domain which are discussed and analyzed for different total lengths of the diode and different materials. |
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| DOI: | 10.1109/ICNF.2013.6578930 |