3 dimensional scaling extensibility on epitaxial source drain strain technology toward Fin FET and beyond

3 dimensional (3D) scaling extensibility on epitaxial source drain strain technology toward Fin FET and beyond was discussed in terms of performance, uniformity and reliability. Horizontal sigma shape for the epitaxial strain technology is an attractive alternative for Fin FET and beyond. Its struct...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Maeda, S., Ko, Y., Jeong, J., Fukutome, H., Kim, M., Kim, S., Choi, J., Shin, D., Oh, Y., Lim, W., Lee, K.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Epitaxial growth Field effect transistors Reliability Shape Strain Stress Surface treatment
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!