3 dimensional scaling extensibility on epitaxial source drain strain technology toward Fin FET and beyond

3 dimensional scaling extensibility on epitaxial source drain strain technology toward Fin FET and beyond

3 dimensional (3D) scaling extensibility on epitaxial source drain strain technology toward Fin FET and beyond was discussed in terms of performance, uniformity and reliability. Horizontal sigma shape for the epitaxial strain technology is an attractive alternative for Fin FET and beyond. Its struct...

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Hauptverfasser: Maeda, S., Ko, Y., Jeong, J., Fukutome, H., Kim, M., Kim, S., Choi, J., Shin, D., Oh, Y., Lim, W., Lee, K.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Epitaxial growth
Field effect transistors
Reliability
Shape
Strain
Stress
Surface treatment
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Zusammenfassung:3 dimensional (3D) scaling extensibility on epitaxial source drain strain technology toward Fin FET and beyond was discussed in terms of performance, uniformity and reliability. Horizontal sigma shape for the epitaxial strain technology is an attractive alternative for Fin FET and beyond. Its structural and electrical superiority was demonstrated.
ISSN:0743-1562