Improved modeling of isolated EDMOS in advanced CMOS technologies

Improved modeling of isolated EDMOS in advanced CMOS technologies

Based on systematic measurements in CMOS 40 nm bulk technology, we propose a new model for isolated Extended-Drain MOS (EDMOS) transistor. Our custom Spice macro-model includes main specific effects in high-voltage devices. In particular, the model accounts for the various parasitic bipolar componen...

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Bibliographische Detailangaben
Hauptverfasser: Litty, Antoine, Ortolland, Sylvie, Cristoloveanu, Sorin, Ros, Helene Beckrich, Golanski, Dominique
Format: Tagungsbericht
Sprache:eng
Schlagworte:
CMOS integrated circuits
EDMOS
Engineering Sciences
Extended-drain
High-voltage
Integrated circuit modeling
integrated MOSFET
Logic gates
Micro and nanotechnologies
Microelectronics
modeling
parasitic bipolar transistor
Radio frequency
Semiconductor device modeling
Solid modeling
Substrates
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Beschreibung
Zusammenfassung:Based on systematic measurements in CMOS 40 nm bulk technology, we propose a new model for isolated Extended-Drain MOS (EDMOS) transistor. Our custom Spice macro-model includes main specific effects in high-voltage devices. In particular, the model accounts for the various parasitic bipolar components (PBCs) that are fully characterized. This model can cover various architectures, from bulk-Si to FDSOI.
ISSN:2381-3555
2691-0462
DOI:10.1109/ICICDT.2013.6563295