Terahertz oscillators using resonant tunneling diodes with InAlGaAs/InP composite collector

We proposed a resonant tunneling diode (RTD) with InAlGaAs/InP composite collector for reduction in transit delay caused by the gamma to L valley transition at the collector depletion region. Terahertz oscillators fabricated with this RTD show room-temperature fundamental oscillations of 680-770 GHz...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Sogabe, R., Shizuno, K., Kanaya, H., Suzuki, S., Asada, M., Sugiyama, H., Yokoyama, H.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Capacitance Delays Frequency measurement InAlGaAs/InP composite collector Indium phosphide Oscillators Resonant frequency Resonant tunneling devices resonant tunneling diode slot antenna terahertz oscillator
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