Terahertz oscillators using resonant tunneling diodes with InAlGaAs/InP composite collector

Terahertz oscillators using resonant tunneling diodes with InAlGaAs/InP composite collector

We proposed a resonant tunneling diode (RTD) with InAlGaAs/InP composite collector for reduction in transit delay caused by the gamma to L valley transition at the collector depletion region. Terahertz oscillators fabricated with this RTD show room-temperature fundamental oscillations of 680-770 GHz...

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Bibliographische Detailangaben
Hauptverfasser: Sogabe, R., Shizuno, K., Kanaya, H., Suzuki, S., Asada, M., Sugiyama, H., Yokoyama, H.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Capacitance
Delays
Frequency measurement
InAlGaAs/InP composite collector
Indium phosphide
Oscillators
Resonant frequency
Resonant tunneling devices
resonant tunneling diode
slot antenna
terahertz oscillator
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Beschreibung
Zusammenfassung:We proposed a resonant tunneling diode (RTD) with InAlGaAs/InP composite collector for reduction in transit delay caused by the gamma to L valley transition at the collector depletion region. Terahertz oscillators fabricated with this RTD show room-temperature fundamental oscillations of 680-770 GHz with the RTD areas of 1-1.5 square microns. Higher frequency will be possible by reducing the RTD area.
ISSN:1092-8669
DOI:10.1109/ICIPRM.2013.6562603