InAs/InP quantum dot mode-locked lasers grown on (113)B InP substrate

InAs/InP quantum dot mode-locked lasers grown on (113)B InP substrate

We report for the first time the passive mode-locking of single section Fabry-Perot (FP) lasers based on InAs quantum dots grown on (113)B InP substrate. Devices under study are a 1 and 2 mm long laser diodes emitting around 1.58 μm. Self-starting pulses with repetition rates around 39 and 23 GHz an...

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Hauptverfasser: Klaime, K., Calo, C., Piron, R., Paranthoen, C., Thiam, D., Batte, T., Dehaese, O., Le Pouliquen, J., Loualiche, S., Le Corre, A., Merghem, K., Martinez, A., Ramdane, A.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Engineering Sciences
Indium phosphide
Laser mode locking
Mode-locking
Molecular beam epitaxial growth
Optical pulses
Optics
Photonic
Quantum dot lasers
quantum dots (QDs)
Radio frequency
semiconductors laser
Substrates
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Beschreibung
Zusammenfassung:We report for the first time the passive mode-locking of single section Fabry-Perot (FP) lasers based on InAs quantum dots grown on (113)B InP substrate. Devices under study are a 1 and 2 mm long laser diodes emitting around 1.58 μm. Self-starting pulses with repetition rates around 39 and 23 GHz and pulse widths down to 1.5 ps are observed after propagation through a suitable length of single-mode fiber for intracavity dispersion compensation.
ISSN:1092-8669
DOI:10.1109/ICIPRM.2013.6562595