Outgassing of hydrogen in an enclosed cavity and ramifications on the reliability of GaAs devices

Outgassing of hydrogen in an enclosed cavity and ramifications on the reliability of GaAs devices

The harmful effect of hydrogen on the reliability of GaAs semiconductor components such as P-HEMT devices is well documented. Hermetic cavities exacerbate this mode of device degradation because at least some of the hydrogen inevitably entrapped in the raw casing material during the original high-te...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Reisinger, A.R., Adams, S.B., Immorlica, A.A.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Bidirectional control
Degradation
Gallium arsenide
Hydrogen
Manufacturing processes
Packaging
Raw materials
Semiconductor device reliability
Semiconductor materials
Testing
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The harmful effect of hydrogen on the reliability of GaAs semiconductor components such as P-HEMT devices is well documented. Hermetic cavities exacerbate this mode of device degradation because at least some of the hydrogen inevitably entrapped in the raw casing material during the original high-temperature manufacturing process is slowly released inside the housing. This paper discusses the results of a theoretical analysis of the dynamics of the mechanism involved.
DOI:10.1109/GAASRW.1997.656134