Experimental Comparison Between Trigate p-TFET and p-FinFET Analog Performance as a Function of Temperature

This paper presents, for the first time, the experimental comparison between the p-type trigate FinFET and trigate p-TFET analog performances for devices fabricated on the same wafer. A careful analysis of the electrical characteristics is performed to choose the best bias conditions for the analog...

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Veröffentlicht in:IEEE transactions on electron devices 2013-08, Vol.60 (8), p.2493-2497
Hauptverfasser: Ghedini Der Agopian, Paula, Martino, Joao Antonio, Rooyackers, Rita, Vandooren, Anne, Simoen, Eddy, Claeys, Cor
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Sprache:eng
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Zusammenfassung:This paper presents, for the first time, the experimental comparison between the p-type trigate FinFET and trigate p-TFET analog performances for devices fabricated on the same wafer. A careful analysis of the electrical characteristics is performed to choose the best bias conditions for the analog comparison between these devices. A higher intrinsic voltage gain is obtained for p-TFET devices because of their better output conductance, which is more than four orders of magnitude better than the one obtained for p-FinFET transistors at the same bias conditions from room temperature up to 150 ° C.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2013.2267614