Experimental Comparison Between Trigate p-TFET and p-FinFET Analog Performance as a Function of Temperature
This paper presents, for the first time, the experimental comparison between the p-type trigate FinFET and trigate p-TFET analog performances for devices fabricated on the same wafer. A careful analysis of the electrical characteristics is performed to choose the best bias conditions for the analog...
Gespeichert in:
Veröffentlicht in: | IEEE transactions on electron devices 2013-08, Vol.60 (8), p.2493-2497 |
---|---|
Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | This paper presents, for the first time, the experimental comparison between the p-type trigate FinFET and trigate p-TFET analog performances for devices fabricated on the same wafer. A careful analysis of the electrical characteristics is performed to choose the best bias conditions for the analog comparison between these devices. A higher intrinsic voltage gain is obtained for p-TFET devices because of their better output conductance, which is more than four orders of magnitude better than the one obtained for p-FinFET transistors at the same bias conditions from room temperature up to 150 ° C. |
---|---|
ISSN: | 0018-9383 1557-9646 |
DOI: | 10.1109/TED.2013.2267614 |