Schottky barrier free NiSi/Si junction technology by Yb-implantation for 1xnm CMOS applications

This is the first report of 0 eV or negative Schottky barrier height for electrons down to 100 K, even on lightly doped Si. It is achieved by energy barrier engineering with Yb doping at NiSi/Si interface. Ideal unity rectification ratio and reasonable sheet resistance are also achieved in this stud...

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Hauptverfasser:	Szu-Hung Chen, Min-Cheng Chen, Hung-Min Chen, Chuan-Feng Shih, Shih-Hsiung Wu, Yi-Ying Ho, Yu-Sheng Lai, Shou-Ji Chen, Liu, Kent, Bo-Yuan Chen, Dong-Yen Lai, Chang-Hsien Lin, Chia-Yi Lin, Fu-Kuo Hsueh, Chi-Ming Wu, Cho-Lun Hsu, Wen-Cheng Chiu, Chun-Chi Chen, Liu, A., Ching-Tai Hsu, Cheng-San Wu, Mei-Yi Lee, Tong-Huan Chou, Jie-Yi Yao, Yi-Ling Shen, Qiong-Zi Hsu, Kun-Lin Lin, Chien-Ting Wu, Mei-Ling Kuo, Chi-Hui Yang, Wen-Fa Wu, ChiaHua Ho, Chenming Hu, Fu-Liang Yang
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Junctions Nickel alloys Resistance Schottky barriers Silicides Silicon Temperature
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Beschreibung
Zusammenfassung:	This is the first report of 0 eV or negative Schottky barrier height for electrons down to 100 K, even on lightly doped Si. It is achieved by energy barrier engineering with Yb doping at NiSi/Si interface. Ideal unity rectification ratio and reasonable sheet resistance are also achieved in this study. This technology can potentially boost future MOSFET performance.
DOI:	10.1109/VLSI-TSA.2013.6545608