Spectral response of InP/Si solar cells irradiated to high proton fluences

Spectral response of InP/Si solar cells irradiated to high proton fluences

InP/Si solar cells have been irradiated with 3 MeV protons to very large fluences where carrier removal, instead of decreases in minority carrier diffusion length, dominates the radiation response. In this regime, radiation-induced expansion of the base depletion width causes I/sub sc/ to increase a...

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Bibliographische Detailangaben
Hauptverfasser: Messenger, S.R., Xapsos, M.A., Walters, R.J., Cotal, H.L., Wojtczuk, S.J., Serreze, H.B., Summers, G.P.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Capacitance-voltage characteristics
Current measurement
Extraterrestrial measurements
Failure analysis
Indium phosphide
Laboratories
Photovoltaic cells
Protons
Silicon
Space technology
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Zusammenfassung:InP/Si solar cells have been irradiated with 3 MeV protons to very large fluences where carrier removal, instead of decreases in minority carrier diffusion length, dominates the radiation response. In this regime, radiation-induced expansion of the base depletion width causes I/sub sc/ to increase above the pre-irradiation level before falling catastrophically to zero. Current-voltage (IV), capacitance-voltage (CV), quantum efficiency (QE), and electrochemical capacitance-voltage (ECV) profiling measurements are presented.
ISSN:0160-8371
DOI:10.1109/PVSC.1997.654256