Low profile integrated passive devices with 3D high density capacitors ideal for embedded and die stacking solutions
* The low profile IPDIA technology capability is limited by the density of the trench capacitor, more explicitly by the depth of the trench. * The 80μm Low Profile node dedicated to the highest capacitor density is qualified. * IPDIA is providing the lowest profile 3D Silicon capacitors with a super...
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creator | Bunel, Catherine Pommier, Mickael Jacqueline, Sebastien |
description | * The low profile IPDIA technology capability is limited by the density of the trench capacitor, more explicitly by the depth of the trench. * The 80μm Low Profile node dedicated to the highest capacitor density is qualified. * IPDIA is providing the lowest profile 3D Silicon capacitors with a superior stability and reliability over a wide temperature range. * Ideal solution where volume and weight are major concerns. |
doi_str_mv | 10.1109/ESTC.2012.6542168 |
format | Conference Proceeding |
fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_6542168</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>6542168</ieee_id><sourcerecordid>6542168</sourcerecordid><originalsourceid>FETCH-LOGICAL-i90t-9d017abe9484775484e7eb358e453fba77e2cf1ca1485762df509bd3084dfb993</originalsourceid><addsrcrecordid>eNpFkMtOwzAURI0QElD6AYjN_YEWO7bjeIlKeUiRWNB95cTXyYU0iWLTqn9PJSqxmdGcxVkMY_eCL4Xg9nH9uVktMy6yZa5VJvLigt0KlRupciWLy_-h1TWbx_jFORciU1KrG5bK4QDjNATqEKhP2EwuoYfRxUh7BI97qjHCgVIL8hlaatoT7COlI9RudDWlYYpAHl0HYZgAdxV6f1K43oMnhJhc_U19A3HofhINfbxjV8F1EefnnrHNy3qzeluUH6_vq6dyQZanhfVcGFehVYUyRp8SDVZSF6i0DJUzBrM6iNoJVWiTZz5obisveaF8qKyVM_bwpyVE3I4T7dx03J5Pkr9x_VzU</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Low profile integrated passive devices with 3D high density capacitors ideal for embedded and die stacking solutions</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Bunel, Catherine ; Pommier, Mickael ; Jacqueline, Sebastien</creator><creatorcontrib>Bunel, Catherine ; Pommier, Mickael ; Jacqueline, Sebastien</creatorcontrib><description>* The low profile IPDIA technology capability is limited by the density of the trench capacitor, more explicitly by the depth of the trench. * The 80μm Low Profile node dedicated to the highest capacitor density is qualified. * IPDIA is providing the lowest profile 3D Silicon capacitors with a superior stability and reliability over a wide temperature range. * Ideal solution where volume and weight are major concerns.</description><identifier>ISBN: 1467346454</identifier><identifier>ISBN: 9781467346450</identifier><identifier>EISBN: 1467346438</identifier><identifier>EISBN: 9781467346443</identifier><identifier>EISBN: 1467346446</identifier><identifier>EISBN: 9781467346436</identifier><identifier>DOI: 10.1109/ESTC.2012.6542168</identifier><language>eng</language><publisher>IEEE</publisher><ispartof>2012 4th Electronic System-Integration Technology Conference, 2012, p.1-36</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6542168$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6542168$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Bunel, Catherine</creatorcontrib><creatorcontrib>Pommier, Mickael</creatorcontrib><creatorcontrib>Jacqueline, Sebastien</creatorcontrib><title>Low profile integrated passive devices with 3D high density capacitors ideal for embedded and die stacking solutions</title><title>2012 4th Electronic System-Integration Technology Conference</title><addtitle>ESTC</addtitle><description>* The low profile IPDIA technology capability is limited by the density of the trench capacitor, more explicitly by the depth of the trench. * The 80μm Low Profile node dedicated to the highest capacitor density is qualified. * IPDIA is providing the lowest profile 3D Silicon capacitors with a superior stability and reliability over a wide temperature range. * Ideal solution where volume and weight are major concerns.</description><isbn>1467346454</isbn><isbn>9781467346450</isbn><isbn>1467346438</isbn><isbn>9781467346443</isbn><isbn>1467346446</isbn><isbn>9781467346436</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2012</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpFkMtOwzAURI0QElD6AYjN_YEWO7bjeIlKeUiRWNB95cTXyYU0iWLTqn9PJSqxmdGcxVkMY_eCL4Xg9nH9uVktMy6yZa5VJvLigt0KlRupciWLy_-h1TWbx_jFORciU1KrG5bK4QDjNATqEKhP2EwuoYfRxUh7BI97qjHCgVIL8hlaatoT7COlI9RudDWlYYpAHl0HYZgAdxV6f1K43oMnhJhc_U19A3HofhINfbxjV8F1EefnnrHNy3qzeluUH6_vq6dyQZanhfVcGFehVYUyRp8SDVZSF6i0DJUzBrM6iNoJVWiTZz5obisveaF8qKyVM_bwpyVE3I4T7dx03J5Pkr9x_VzU</recordid><startdate>201209</startdate><enddate>201209</enddate><creator>Bunel, Catherine</creator><creator>Pommier, Mickael</creator><creator>Jacqueline, Sebastien</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>201209</creationdate><title>Low profile integrated passive devices with 3D high density capacitors ideal for embedded and die stacking solutions</title><author>Bunel, Catherine ; Pommier, Mickael ; Jacqueline, Sebastien</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-9d017abe9484775484e7eb358e453fba77e2cf1ca1485762df509bd3084dfb993</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2012</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Bunel, Catherine</creatorcontrib><creatorcontrib>Pommier, Mickael</creatorcontrib><creatorcontrib>Jacqueline, Sebastien</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Bunel, Catherine</au><au>Pommier, Mickael</au><au>Jacqueline, Sebastien</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Low profile integrated passive devices with 3D high density capacitors ideal for embedded and die stacking solutions</atitle><btitle>2012 4th Electronic System-Integration Technology Conference</btitle><stitle>ESTC</stitle><date>2012-09</date><risdate>2012</risdate><spage>1</spage><epage>36</epage><pages>1-36</pages><isbn>1467346454</isbn><isbn>9781467346450</isbn><eisbn>1467346438</eisbn><eisbn>9781467346443</eisbn><eisbn>1467346446</eisbn><eisbn>9781467346436</eisbn><abstract>* The low profile IPDIA technology capability is limited by the density of the trench capacitor, more explicitly by the depth of the trench. * The 80μm Low Profile node dedicated to the highest capacitor density is qualified. * IPDIA is providing the lowest profile 3D Silicon capacitors with a superior stability and reliability over a wide temperature range. * Ideal solution where volume and weight are major concerns.</abstract><pub>IEEE</pub><doi>10.1109/ESTC.2012.6542168</doi><tpages>36</tpages></addata></record> |
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title | Low profile integrated passive devices with 3D high density capacitors ideal for embedded and die stacking solutions |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-19T02%3A03%3A46IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Low%20profile%20integrated%20passive%20devices%20with%203D%20high%20density%20capacitors%20ideal%20for%20embedded%20and%20die%20stacking%20solutions&rft.btitle=2012%204th%20Electronic%20System-Integration%20Technology%20Conference&rft.au=Bunel,%20Catherine&rft.date=2012-09&rft.spage=1&rft.epage=36&rft.pages=1-36&rft.isbn=1467346454&rft.isbn_list=9781467346450&rft_id=info:doi/10.1109/ESTC.2012.6542168&rft_dat=%3Cieee_6IE%3E6542168%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&rft.eisbn=1467346438&rft.eisbn_list=9781467346443&rft.eisbn_list=1467346446&rft.eisbn_list=9781467346436&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=6542168&rfr_iscdi=true |