Preparation and characterization of bulk nanoporous Sn and SnO2

EUV lithography has received much attention because of leading the next generation lithography for more compact, with node size as small as 40nm integrated circuit (IC) fabrication process. Additional, the EUV lithography has been extensively researched around the world for semiconductor future road map. Bulk nanoporous of Sn and SnO 2 become reliable candidate to generate EUV lithography. This paper is focused on preparation and characterization of bulk nanoporous material of Sn and SnO 2 to overcome debris problem. The sample was prepared by reaction solid-state of powder Sn without organic binder and SnO 2 with organic binder with compacting and sintering process. The samples are characterized by morphology identification (SEM) and phase identification (XRD). The result is proposed as prospect for future EUV lithography research to get solid low plasma density target.