Highly Reliable Multiple-Channel IGZO Thin-Film Transistors Employing Asymmetric Spacing and Channel Width

Highly Reliable Multiple-Channel IGZO Thin-Film Transistors Employing Asymmetric Spacing and Channel Width

We designed and fabricated highly reliable multiple-channel indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) without any additional fabrication processes. We also investigated the geometric factors of the multiple-channel structure that influence the reliability of the IGZO TFTs in high...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE electron device letters 2013-06, Vol.34 (6), p.771-773
Hauptverfasser: CHOI, Sung-Hwan, HAN, Min-Koo
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Asymmetry
Channels
Deltas
Devices
Electronics
Exact sciences and technology
Indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs)
Oxides
passivation
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
temperature
Thin film transistors
Transistors
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We designed and fabricated highly reliable multiple-channel indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) without any additional fabrication processes. We also investigated the geometric factors of the multiple-channel structure that influence the reliability of the IGZO TFTs in high saturation mode, such as the spacing and width of the subchannels. The proposed device exhibited superior reliability(Δ V TH
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2013.2256457